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As the SSD can atomically confirm an unreachable block is free, the drive can simultaneously trim/replace the block and log-info to the drive's internal firmware. This provides the user (a) finer (less coarse) control over the retention of flash pages than dynamic erase management (DEMA), (b) knowledge of additional problems the particular drive has encountered in the past, such as bad sectors, overheating, etc., (c) if the user knows in advance the pages to be preserved, uninterrupted (no fine-grained free/reclaimed state), and the pages to be deleted, this action can be completed in a single command, rather than having to copy everything, and erase without replacement.
For block-lifecycle (e.g. dynamic) SSDs, multi-level cell (MLC) blocks may have more varying retention times. E.g. an SSD using the lenascel flash device may have varying writes to different blocks when certain parameters such as file system density are varied. This is more conspicuous in NAND strings with shorter lifetimes, where the number of writes required to reach the end of the string of cells will also increase the percentage of time the cells are unretained. (See the SSD White Paper - MLC Levels for more detailed explanations.) This can leave some of the blocks of flash less utilized than others, and given existing data retention policies, can cause selective data retention of blocks. Such systems could make use of a block lifecycle (e.g. dynamic) SSD write cache, which may or may not employ a TRIM command, but which provides some additional assurance that block reuse will be as optimized as possible with respect to flash retention policies. Such write caches have traditionally been built into the flash itself, but with the implementation of MLC flash in some products (e.g. MLC SSDs), such as the lenascel, or in some flash-based dynamic write buffers, such as Intel's Optane SSD DC P4800X, presumably the write cache cannot be fired on every write. d2c66b5586